EFFECT OF ANNEALING PROCESS PARAMETERS ON THE PROPERTIES OF AUGE OHMIC CONTACTS TO GAAS

被引：17

作者：

KULKARNI, AK

LUKOWSKI, JT

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 59卷 / 08期

关键词：

D O I：

10.1063/1.336949

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：2901 / 2904

页数：4

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