ON THE BREMSSTRAHLUNG ORIGIN OF HOT-CARRIER-INDUCED PHOTONS IN SILICON DEVICES

被引：250

作者：

LACAITA, AL

ZAPPA, F

BIGLIARDI, S

MANFREDI, M

机构：

[1] POLITECN MILAN,DIPARTIMENTO ELECTRON,I-20133 MILAN,ITALY

[2] UNIV PARMA,DIPARTIMENTO FIS,I-43100 PARMA,ITALY

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1993年 / 40卷 / 03期

关键词：

D O I：

10.1109/16.199363

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper we report the first spectrally resolved absolute measurements of hot-carrier-induced photon emission in silicon. In order to avoid uncertainties in geometrical and physical parameters, we chose the simplest conceivable device: an avalanching p-n junction. We measured a photon emission efficiency of 2.9 x 10(-5) photons with energy higher than 1.14 eV per carrier crossing the junction, independent of the lattice temperature down to 20 K. On the basis of these results the Bremsstrahlung origin of the hot-carrier-induced light emission is critically reviewed.

引用

页码：577 / 582

页数：6

共 26 条

[1] HOT-CARRIER LUMINESCENCE IN SI [J].