STUDIES ON OPTICAL COUPLING BETWEEN SILICON P-N JUNCTIONS

被引：43

作者：

HAITZ, RH

机构：

来源：

SOLID-STATE ELECTRONICS | 1965年 / 8卷 / 04期

关键词：

D O I：

10.1016/0038-1101(65)90119-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：417 / &

相关论文

共 21 条

[1] UNIFORM SILICON P-N JUNCTIONS .1. BROAD AREA BREAKDOWN
BATDORF, RL
CHYNOWETH, AG
DACEY, GC
FOY, PW
[J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (07) : 1153 - 1160
[2] MICROPLASMA FLUCTUATIONS IN SILICON
CHAMPLIN, KS
[J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (07) : 1039 - 1050
[3] PHOTON EMISSION FROM AVALANCHE BREAKDOWN IN SILICON
CHYNOWETH, AG
MCKAY, KG
[J]. PHYSICAL REVIEW, 1956, 102 (02): : 369 - 376
[4] EFFECT OF DISLOCATIONS ON BREAKDOWN IN SILICON P-N JUNCTIONS
CHYNOWETH, AG
PEARSON, GL
[J]. JOURNAL OF APPLIED PHYSICS, 1958, 29 (07) : 1103 - 1110
[5] PHONON MEAN FREE PATH IN SILICON BETWEEN 77 + 250DEGREESK
GERETH, R
HUBNER, K
[J]. PHYSICAL REVIEW, 1964, 134 (1A): : A235 - +
[6] AVALANCHE EFFECTS IN SILICON P-N JUNCTIONS .2. STRUCTURALLY PERFECT JUNCTIONS
GOETZBERGER, A
SCARLETT, RM
HAITZ, RH
MCDONALD, B
[J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (06) : 1591 - +
[7] VOLTAGE DEPENDENCE OF MICROPLASMA DENSITY IN P-N JUNCTIONS IN SILICON
GOETZBERGER, A
STEPHENS, C
[J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 (12) : 2646 - &
[8] GOETZBERGER A, 1963, PHIL MAG, V8, P1063
[9] AVALANCHE EFFECTS IN SILICON P-N JUNCTIONS .1. LOCALIZED PHOTOMULTIPLICATION STUDIES ON MICROPLASMAS
HAITZ, RH
GOETZBERGER, A
SCARLETT, RM
SHOCKLEY, W
[J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (06) : 1581 - &
[10] MICROPLASMA INTERACTION IN SILICON P-N JUNCTIONS
HAITZ, RH
[J]. SOLID-STATE ELECTRONICS, 1964, 7 (06) : 439 - &