MULTITARGET SPUTTERING USING DECOUPLED PLASMAS

被引:34
作者
WICKERSHAM, CE
GREENE, JE
机构
[1] UNIV ILLINOIS,DEPT MECH ENGN,URBANA,IL 61801
[2] UNIV ILLINOIS,DEPT MET,URBANA,IL 61801
[3] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
关键词
METALS AND ALLOYS - Thin Films - PLASMAS - SPUTTERING;
D O I
10.1063/1.322529
中图分类号
O59 [应用物理学];
学科分类号
摘要
A method is developed for quantitatively predicting the chemical composition and thickness distributions of alloy films deposited by decoupled-plasma multitarget rf sputtering in which the substrates rotate at a variable rate through separate glow discharges. The film thickness distributions deposited from each target are expressed in terms of deposition variables such as applied target voltage, target radius, sputtering pressure, substrate rotation radius, rotation rate, and target-substrate separation. Predicted films thickness distributions were found to be in agreement with experimental results. Single-phase In//1//-//xGa//xSb alloy films were grown whose experimentally determined compositions agreed with predicted values. Intercalated films with layer thicknesses of less than 100 A and films which were chemically graded in the lateral and in-depth directions were also grown.
引用
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页码:4734 / 4739
页数:6
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