ARGON IMPLANTATION GETTERING FOR A THROUGH-OXIDE ARSENIC-IMPLANTED LAYER

被引：9

作者：

MURASE, K ^{[1
]}

HARADA, H ^{[1
]}

机构：

[1] NIPPON TELEG & TEL PUBL CORP,MUSASHINO ELECT COMMUN LAB,MUSASHINO,TOKYO 180,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1977年 / 48卷 / 10期

关键词：

D O I：

10.1063/1.323398

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4404 / 4406

页数：3

共 11 条

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[2] ANOMALOUS RESIDUAL DAMAGE IN SI AFTER ANNEALING OF THROUGH-OXIDE ARSENIC IMPLANTATIONS [J].

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REDDI, VGK .

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[3] RESIDUAL DISORDER IN SI FROM OXYGEN RECOILS IN ANNEALED THROUGH OXIDE ARSENIC IMPLANTS [J].

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SIGMON, TW .

APPLIED PHYSICS LETTERS, 1974, 25 (05) :297-299

[4] HIGH-PERFORMANCE MOS INTEGRATED-CIRCUIT USING ION-IMPLANTATION TECHNIQUE [J].

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RUPPRECHT, HS .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1975, 10 (04) :205-211

[5]

GROVE AS, 1967, PHYS TECHNOL S, P298

[6] ION-IMPLANTED SEMICONDUCTOR-DEVICES [J].

LEE, DH ;

MAYER, JW .

PROCEEDINGS OF THE IEEE, 1974, 62 (09) :1241-1255

[7]

POATE JM, 1973, ION IMPLANTATION SEM, P317

[8]

ROZGONYI GA, 1976, 149TH EL CHEM SOC M, P171

[9]

SEIDEL TE, 1973, ION IMPLANTATION SEM, P305

[10] ION-IMPLANTATION GETTERING OF GOLD IN SILICON [J].

SIGMON, TW ;

CSEPREGI, L ;

MAYER, JW .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (07) :1116-1117

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