ION-IMPLANTATION GETTERING OF GOLD IN SILICON

被引：13

作者：

SIGMON, TW

CSEPREGI, L

MAYER, JW

机构：

[1] CALTECH,PASADENA,CA 91125

[2] HEWLETT PACKARD CO LABS,PALO ALTO,CA 94304

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1976年 / 123卷 / 07期

关键词：

D O I：

10.1149/1.2133007

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1116 / 1117

页数：2

共 12 条

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HSIEH, CM ;

POATE, JM ;

PICKAR, KA .

APPLIED PHYSICS LETTERS, 1972, 21 (10) :485-&

[2]

CHU WK, 1975, ION IMPLANTATION SEM, P177

[3] CHANNELING EFFECT MEASUREMENTS OF RECRYSTALLIZATION OF AMORPHOUS SI LAYERS ON CRYSTAL SI [J].

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MAYER, JW ;

SIGMON, TW .

PHYSICS LETTERS A, 1975, 54 (02) :157-158

[4]

CSEPREGI L, 1976, RADIAT EFF, V28, P277

[5] METAL PRECIPITATES IN SILICON P-N JUNCTIONS [J].

GOETZBERGER, A ;

SHOCKLEY, W .

JOURNAL OF APPLIED PHYSICS, 1960, 31 (10) :1821-1824

[6] ION-IMPLANTATION DAMAGE GETTERING EFFECT IN SILICON PHOTODIODE ARRAY CAMERA TARGET [J].

HSIEH, CM ;

MATHEWS, JR ;

SEIDEL, HD ;

PICKAR, KA ;

DRUM, CM .

APPLIED PHYSICS LETTERS, 1973, 22 (05) :238-240

[7] ION IMPLANTATION OF SILICON AND GERMANIUM AT ROOM TEMPERATURE . ANALYSIS BY MEANS OF 1.0-MEV HELIUM ION SCATTERING [J].

MAYER, JW ;

ERIKSSON, L ;

PICRAUX, ST ;

DAVIES, JA .

CANADIAN JOURNAL OF PHYSICS, 1968, 46 (06) :663-&

[8]

MULLER H, 1975, APPL PHYS LETT, V26, P292, DOI 10.1063/1.88161

[9]

POATE JM, 1973, ION IMPLANTATION SEM, P317

[10]

Seidel T. E., 1975, Lattice Defects in Semiconductors, 1974, P494

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