SILICON DAMAGE AND RESIDUE OVERLAYER CAUSED BY RIE AND RIBE PROCESSES WITH CHF3

被引：15

作者：

CARDINAUD, C ^{[1
]}

TURBAN, G ^{[1
]}

GROLLEAU, B ^{[1
]}

GRANDCHAMP, JP ^{[1
]}

LEJEUNE, C ^{[1
]}

SCHEIBLIN, P ^{[1
]}

COLLARD, E ^{[1
]}

机构：

[1] UNIV PARIS 11,INST ELECTR FONDAMENTALE,CNRS,UA 22,F-91405 ORSAY,FRANCE

来源：

APPLIED SURFACE SCIENCE | 1989年 / 36卷 / 1-4期

关键词：

D O I：

10.1016/0169-4332(89)90927-6

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：322 / 331

页数：10

共 11 条

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[9] CARBONACEOUS OVERLAYER AND NEAR-SURFACE DAMAGE AFTER PURE CF4 REACTIVE ION-BEAM ETCHING OF SILICON - EXPOSURE DOSE EFFECTS [J].

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