INGAAS/GAAS QUANTUM-WELL LASERS WITH DRY-ETCHED MIRROR PASSIVATED BY VACUUM ATOMIC LAYER EPITAXY

被引：9

作者：

FRATESCHI, NC

JOW, MY

DAPKUS, PD

LEVI, AFJ

机构：

[1] Department of Electrical Engineering-Electrophysics, University of Southern California, Los Angeles

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 14期

关键词：

D O I：

10.1063/1.112905

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report measurements of strained InGaAs/GaAs quantum well laser diodes with electron cyclotron resonance (ECR) plasma etched mirrors that are passivated and smoothed with a novel technique involving the selective area growth of GaAs by vacuum atomic layer epitaxy. The threshold current of as-cleaved, etched, and passivated devices has been studied and a significant improvement in mirror feedback is shown with the passivation and smoothing of etched mirrors oriented along the [001] planes. (C) 1994 American Institute of Physics.

引用

页码：1748 / 1750

页数：3

共 7 条

[1] ELECTRON-CYCLOTRON RESONANCE MICROWAVE DISCHARGES FOR ETCHING AND THIN-FILM DEPOSITION [J].