REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION OSCILLATIONS DURING MOLECULAR-BEAM EPITAXY GROWTH OF GALLIUM ANTIMONIDE, ALUMINUM ANTIMONIDE, AND INDIUM ARSENIDE

被引：15

作者：

SUBBANNA, S ^{[1
]}

GAINES, J ^{[1
]}

TUTTLE, G ^{[1
]}

KROEMER, H ^{[1
]}

CHALMERS, S ^{[1
]}

ENGLISH, JH ^{[1
]}

机构：

[1] UNIV CALIF SANTA BARBARA,DEPT MAT,SANTA BARBARA,CA 93106

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 02期

关键词：

D O I：

10.1116/1.584735

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：289 / 295

页数：7

共 23 条

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[7] ROOM-TEMPERATURE OPERATION OF INGAASSB/ALGASB DOUBLE HETEROSTRUCTURE LASERS NEAR 2.2 MU-M PREPARED BY MOLECULAR-BEAM EPITAXY
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[8] CURRENT UNDERSTANDING AND APPLICATIONS OF THE RHEED INTENSITY OSCILLATION TECHNIQUE
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[J]. JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) : 1 - 8
[9] POLYTYPE SUPER-LATTICES AND MULTI-HETEROJUNCTIONS
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (07) : L529 - L532
[10] NUCLEATION AND CHARACTERIZATION OF PSEUDOMORPHIC ZNSE GROWN ON MOLECULAR-BEAM EPITAXIALLY GROWN GAAS EPILAYERS
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[J]. APPLIED PHYSICS LETTERS, 1987, 50 (04) : 200 - 202

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