CHARACTERISTICS OF DOPED OXIDES AND THEIR USE IN SILICON DEVICE FABRICATION

被引：17

作者：

BROWN, DM

GHEZZO, M

GARFINKEL, M

TENNEY, A

TAFT, EA

WONG, J

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1972年 / 17卷 / DEC期

关键词：

D O I：

10.1016/0022-0248(72)90258-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

收藏

页码：276 / +

页数：1

相关论文

共 32 条

[1] STRUCTUAL CHANGES OF ARSENIC SILICATE GLASSES WITH HEAT TREATMENTS
ARAI, E
TERUNUMA, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1970, 9 (06) : 691 - +
[2] DOPED OXIDES AS DIFFUSION SOURCES .2. PHOSPHORUS INTO SILICON
BARRY, ML
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (11) : 1405 - &
[3] DOPED OXIDES AS DIFFUSION SOURCES .I. BORON INTO SILICON
BARRY, ML
OLOFSEN, P
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (06) : 854 - &
[4] VIBRATIONAL SPECTRA OF VITREOUS SILICA GERMANIA AND BERYLLIUM FLUORIDE
BELL, RJ
BIRD, NF
DEAN, P
[J]. JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1968, 1 (02): : 299 - &
[5] BLOCHNER JM, 1970, CHEMICAL VAPOR DEPOS
[6] SELF-REGISTERED MOLYBDENUM-GATE MOSFET
BROWN, DM
ENGELER, WE
GARFINKEL, M
GRAY, PV
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (08) : 874 - +
[7] GLASS SOURCE B DIFFUSION IN SI AND SIO2
BROWN, DM
KENNICOTT, PR
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (02) : 293 - +
[8] P-CHANNEL REFRACTORY METAL SELF-REGISTERED MOSFET
BROWN, DM
CADY, WR
SPRAGUE, JW
SALVAGNI, PJ
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1971, ED18 (10) : 931 - &
[9] A NEW MASKING TECHNIQUE FOR SEMICONDUCTOR PROCESSING
BROWN, DM
ENGELER, WE
GARFINKE.M
HEUMANN, FK
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (07) : 730 - &
[10] REFRACTORY METAL SILICON DEVICE TECHNOLOGY
BROWN, DM
ENGELER, WE
GARFINKEL, M
GRAY, PV
[J]. SOLID-STATE ELECTRONICS, 1968, 11 (12) : 1105 - +

← 1 2 3 4 →