REACTIVE SPUTTER ETCHING AND REACTIVE ION MILLING-SELECTIVITY, DIMENSIONAL CONTROL, AND REDUCTION OF MOS-INTERFACE DEGRADATION

被引：16

作者：

MEUSEMANN, B

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1979年 / 16卷 / 06期

关键词：

D O I：

10.1116/1.570320

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1886 / 1888

页数：3

共 12 条

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[8]

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[9] PROFILE CONTROL BY REACTIVE SPUTTER ETCHING [J].

LEHMANN, HW ;

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[10] IMAGING AND ALIGNMENT TESTS ON AN ELECTRON PROJECTION SYSTEM [J].

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