HEAVY-METAL GETTERING BY AN INTRINSIC GETTERING TECHNIQUE USING MICRODEFECTS IN CZOCHRALSKI-GROWN SILICON-WAFERS

被引：25

作者：

KISHINO, S

NAGASAWA, K

IIZUKA, T

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1980年 / 19卷 / 08期

关键词：

D O I：

10.1143/JJAP.19.L466

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L466 / L468

页数：3

共 12 条

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[2] DEFECTS IN SILICON SUBSTRATES [J].

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[3]

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[4] SUPPRESSION OF OXIDATION-STACKING-FAULT GENERATION BY PRE-ANNEALING IN N2 ATMOSPHERE [J].

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ISOMAE, S ;

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MAKI, M .

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[5]

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[6]

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[7] IDENTIFICATION, ANNIHILATION, AND SUPPRESSION OF NUCLEATION SITES RESPONSIBLE FOR SILICON EPITAXIAL STACKING-FAULTS [J].

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PEARCE, CW .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (12) :1910-1915

[8] INTRINSIC GETTERING BY OXIDE PRECIPITATE INDUCED DISLOCATIONS IN CZOCHRALSKI SI [J].

TAN, TY ;

GARDNER, EE ;

TICE, WK .

APPLIED PHYSICS LETTERS, 1977, 30 (04) :175-176

[9] NUCLEATION OF CUSI PRECIPITATE COLONIES IN OXYGEN-RICH SILICON [J].

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[10]

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