LATERAL GROWTH OF GAAS OVER SIO2-FILMS PREPARED ON (111)B SUBSTRATES BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：4

作者：

YAMAGUCHI, K

OKAMOTO, K

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1989年 / 28卷 / 04期

关键词：

D O I：

10.1143/JJAP.28.685

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：685 / 689

页数：5

共 15 条

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