EFFECTS OF INHOMOGENEITIES OF SURFACE-OXIDE CHARGES ON ELECTRON-ENERGY LEVELS IN A SEMICONDUCTOR SURFACE-INVERSION LAYER

被引：19

作者：

NING, TH

SAH, CT

机构：

[1] UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801

[2] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

来源：

PHYSICAL REVIEW B | 1974年 / 9卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.9.527

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：527 / 535

页数：9

相关论文

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