REVERSIBLE BREAKDOWN VOLTAGE COLLAPSE IN SILICON GATE-CONTROLLED DIODES

被引：15

作者：

RUSU, A ^{[1
]}

PIETRAREANU, O ^{[1
]}

BULUCEA, C ^{[1
]}

机构：

[1] RES DEV INST ELECTR COMPONENTS, ICCE, STR EROU IANCU NICOLAE 32B, BUCHAREST, ROMANIA

来源：

SOLID-STATE ELECTRONICS | 1980年 / 23卷 / 05期

关键词：

D O I：

10.1016/0038-1101(80)90084-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：473 / 480

页数：8

共 10 条

[1]

AMANTEA R, 1978, COMMUNICATION

[2] AVALANCHE INJECTION INTO OXIDE IN SILICON GATE-CONTROLLED DEVICES .2. EXPERIMENTAL RESULTS [J].

BULUCEA, C .

SOLID-STATE ELECTRONICS, 1975, 18 (05) :381-391

[3] SURFACE BREAKDOWN IN SILICON PLANAR JUNCTIONS - COMPUTER-AIDED EXPERIMENTAL DETERMINATION OF CRITICAL-FIELD [J].

BULUCEA, C ;

RUSU, A ;

POSTOLACHE, C .

SOLID-STATE ELECTRONICS, 1974, 17 (09) :881-888

[4] SURFACE BREAKDOWN IN SILICON PLANAR DIODES EQUIPPED WITH FIELD PLATE [J].

CONTI, F ;

CONTI, M .

SOLID-STATE ELECTRONICS, 1972, 15 (01) :93-+

[5]

Grove A S, 1967, PHYS TECHNOLOGY SEMI

[6] EFFECT OF SURFACE FIELDS ON BREAKDOWN VOLTAGE OF PLANAR SILICON P-N JUNCTIONS [J].

GROVE, AS ;

LEISTIKO, O ;

HOOPER, WW .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (03) :157-+

[7] BREAKDOWN VOLTAGE OF PLANAR SILICON JUNCTIONS [J].

LEISTIKO, O ;

GROVE, AS .

SOLID-STATE ELECTRONICS, 1966, 9 (09) :847-&

[8] DEEP-DEPLETION BREAKDOWN VOLTAGE OF SILICON-DIOXIDE SILICON MOS CAPACITORS [J].

RUSU, A ;

BULUCEA, C .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (03) :201-205

[9] AVALANCHE BREAKDOWN VOLTAGES OF ABRUPT AND LINEARLY GRADED P-N JUNCTIONS IN GE SI GAAS AND GAP - (DOPANT EFFECTS IMPURITY EFFECTS T) [J].

SZE, SM ;

GIBBONS, G .

APPLIED PHYSICS LETTERS, 1966, 8 (05) :111-&

[10] HOLE CURRENTS IN THERMALLY GROWN SIO2 [J].

VERWEY, JF .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (05) :2273-&

← 1 →