CURRENT CONTROLLED LIQUID-PHASE EPITAXIAL-GROWTH OF HG1-XCDXTE

被引：17

作者：

VANIER, PE ^{[1
]}

POLLAK, FH ^{[1
]}

RACCAH, PM ^{[1
]}

机构：

[1] YESHIVA UNIV,BELFER GRAD SCH SCI,NEW YORK,NY 10033

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1980年 / 9卷 / 01期

关键词：

D O I：

10.1007/BF02655221

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：153 / 164

页数：12

共 9 条

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[7]

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[8] VARIATIONS IN COMPOSITION IN BINARY AND TERNARY SEMICONDUCTORS UTILIZING ELECTROLYTE ELECTROREFLECTANCE - TOPOGRAPHICAL INVESTIGATION [J].

POLLAK, FH ;

OKEKE, CE ;

VANIER, PE ;

RACCAH, PM .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) :4216-4222

[9] VARIATIONS IN STOICHIOMETRY IN HG1-XCDXTE USING ELECTROLYTE ELECTROREFLECTANCE - TOPOGRAPHICAL INVESTIGATION [J].

VANIER, PE ;

POLLAK, FH ;

RACCAH, PM .

APPLIED OPTICS, 1977, 16 (11) :2858-2860

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