ARSENIC CLUSTER ENGINEERING FOR EXCITONIC ELECTROOPTICS

被引：16

作者：

MELLOCH, MR

NOLTE, DD

OTSUKA, N

CHANG, CL

WOODALL, JM

机构：

[1] PURDUE UNIV,DEPT PHYS,W LAFAYETTE,IN 47907

[2] PURDUE UNIV,SCH MAT ENGN,W LAFAYETTE,IN 47907

[3] IBM CORP,DIV RES,YORKTOWN HTS,NY 10598

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1993年 / 11卷 / 03期

关键词：

D O I：

10.1116/1.586791

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An unexpectedly large room-temperature electro-optic effect has been observed in Al0.25Ga0.75As containing As clusters. The room-temperature band-edge absorption of this metal-semiconductor composite exhibits a clearly defined excitonic edge. This band-edge absorption can be strongly affected by electric fields due to exciton life-time broadening; almost a 60% differential transmission was obtained for a 1 mum thick Al0.25Ga0.75As epilayer containing As clusters. This is comparable to values obtained using GaAs/AlGaAs multiple quantum well structures. The excitonic absorption is a strong function of the average As cluster spacing that is controlled with the cluster coarsening anneal temperature. This enhancement of the excitonic optical properties by embedded metallic clusters represents a fundamental departure from traditional quantum well engineering.

引用

页码：795 / 797

页数：3

共 15 条

[1] SUBPICOSECOND PHOTORESPONSE OF CARRIERS IN LOW-TEMPERATURE MOLECULAR-BEAM EPITAXIAL IN0.52AL0.48AS/INP [J].