PHOTOEMISSION SPECTROSCOPY OF GAAS-AS PHOTODIODES

被引：40

作者：

MCINTURFF, DT ^{[1
]}

WOODALL, JM ^{[1
]}

WARREN, AC ^{[1
]}

BRASLAU, N ^{[1
]}

PETTIT, GD ^{[1
]}

KIRCHNER, PD ^{[1
]}

MELLOCH, MR ^{[1
]}

机构：

[1] PURDUE UNIV,SCH ELECT ENGN,W LAFAYETTE,IN 47907

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 04期

关键词：

D O I：

10.1063/1.106630

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on photoemission measurements of molecular-beam-epitaxy-grown GaAs p-i-n structures, in which the optically active insulating GaAs layer contains As precipitates (GaAs:As). GaAs:As is formed by low-temperature growth of GaAs at 225-degrees-C, followed by an anneal at 600-degrees-C. Layers grown in this way have been reported to be sensitive to subband-gap light. The measured barrier height of 0.7 eV, extracted from a well-behaved Fowler plot, indicates that the mechanism for photodetection involves arsenic clusters embedded in GaAs acting as internal Schottky barriers.

引用

页码：448 / 450

页数：3

共 8 条

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