PREPARATION OF CUINS2 THIN-FILMS BY SINGLE-SOURCE MOCVD PROCESS USING BU2IN(SPR)CU(S2CNPRI2)

被引:53
作者
NOMURA, R
SEKL, Y
MATSUDA, H
机构
[1] Department of Applied Chemistry, Faculty of Engineering, Osaka University, Yamada-Oka, Suita
关键词
COPPER INDIUM SULFIDE; METAL-ORGANIC CHEMICAL VAPOR DEPOSITION; CHALCOPYRITE; SOLAR CELL;
D O I
10.1039/jm9920200765
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Chalcopyrite CuInS2, thin layers were successfully prepared by a single-source metal-organic chemical vapour deposition (MOCVD) process using Bu2In(SPri)Cu(S2CNPr2i) as a new source material at 400-degrees-C of T(sub), under reduced pressure of ca. 0.8 Torr.
引用
收藏
页码:765 / 766
页数:2
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