PREPARATION OF (111)-ORIENTED BETA-TA2O5 THIN-FILMS BY CHEMICAL VAPOR-DEPOSITION USING METALORGANIC PRECURSORS

Tantalum pentaoxide thin films with orthorhombic structure have been grown on quartz and Si(100) substrates at 600 approximately 700-degrees-C under reduced pressure of 5 Torr by metalorganic chemical vapor deposition. Ta(OC2H5)5 and Ta(DPM)4Cl were used as the source materials, and were compared with each other with respect to deposition behavior, crystal structure and orientation of Ta2O5 films. When the Ta(DPM)4Cl precursor was used, fine (111)-oriented Ta2O5 films were obtained on quartz and Si(100) substrates in a temperature range of 625 approximately 675-degrees-C.