DC THERMAL-MODEL OF SEMICONDUCTOR-DEVICE PRODUCES CURRENT FILAMENTS AS STABLE CURRENT DISTRIBUTIONS

被引：6

作者：

OLSON, HM ^{[1
]}

机构：

[1] BELL TEL LABS INC,READING,PA 19604

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1977年 / 24卷 / 09期

关键词：

D O I：

10.1109/T-ED.1977.18902

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：1177 / 1184

页数：8

相关论文

共 29 条

[11] Gibbons G., 1973, AVALANCHE DIODE MICR
[12] AVALANCHE EFFECTS IN SILICON P-N JUNCTIONS .2. STRUCTURALLY PERFECT JUNCTIONS
GOETZBERGER, A
SCARLETT, RM
HAITZ, RH
MCDONALD, B
[J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (06) : 1591 - +
[13] SPACE-CHARGE-LIMITED CURRENT INSTABILITIES IN N+-PI-N+ SILICON DIODES
HAGENLOCHER, AK
CHEN, WT
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1969, 13 (05) : 533 - +
[14] FILAMENTARY THERMAL INSTABILITIES IN IMPATT DIODES
HOLWAY, LH
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (02) : 80 - 86
[15] HOLWAY LH, 1926, IEEE T ELECTRON DEVI, V23, P1304
[16] KLEIN N, 1969, ADV ELECTRONICS ELEC, V26
[17] THERMAL-ANALYSIS OF P-N-JUNCTION SECOND BREAKDOWN INITIATION
MARS, P
[J]. INTERNATIONAL JOURNAL OF ELECTRONICS, 1972, 32 (01) : 39 - &
[18] Morse PM, 1953, METHODS THEORETICAL, V2
[19] MORSE PM, 1953, METHODS THEORETICAL, V1
[20] CURRENT RUNAWAY AND AVALANCHE EFFECTS IN N-CDTE
OLIVER, MR
MCWHORTER, AL
FOYT, AG
[J]. APPLIED PHYSICS LETTERS, 1967, 11 (04) : 111 - +