BIAS DEPENDENCE OF THE MODFET INTRINSIC MODEL ELEMENTS VALUES AT MICROWAVE-FREQUENCIES

被引：68

作者：

HUGHES, B ^{[1
]}

TASKER, PJ ^{[1
]}

机构：

[1] CORNELL UNIV,DEPT ELECT ENGN,PROFESSOR EASTMANS GRP,ITHACA,NY 14853

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1989年 / 36卷 / 10期

关键词：

D O I：

10.1109/16.40909

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2267 / 2273

页数：7

共 31 条

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