Signature and capture cross section of copper-related hole traps in p-type high-purity germanium

被引：29

作者：

Simoen, E ^{[1
]}

Clauws, P ^{[1
]}

Lamon, M ^{[1
]}

Vennik, J ^{[1
]}

机构：

[1] Rijksuniv Gent, Lab Kristallog & Studie Vaste Stof, B-9000 Ghent, Belgium

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1986年 / 1卷 / 01期

关键词：

D O I：

10.1088/0268-1242/1/1/007

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The hole capture and emission characteristics of deep levels in p-type detector-grade high-purity germanium have been investigated using double lock-in DLTS. The long voltage pulses applied to the high-resistivity semiconductor and the double lock-in mode necessitate corrections in order to derive the signature and the capture cross section accurately. The dominant deep levels that are probably all copper related have up values in the range 10(-12)-10(-13) cm(2); they are regarded as deep acceptors which may cause important hole trapping and resolution loss in nuclear detectors.

引用

页码：53 / 57

页数：5

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