ACTIVATION-ENERGY FOR THE PHOTOLUMINESCENCE W-CENTER IN SILICON

被引：17

作者：

SCHULTZ, PJ

THOMPSON, TD

ELLIMAN, RG

机构：

[1] UNIV WESTERN ONTARIO,DEPT PHYS,LONDON N6A 3K7,ONTARIO,CANADA

[2] AUSTRALIAN NATL UNIV,CTR LASER PHYS,CANBERRA,ACT 2600,AUSTRALIA

[3] ROYAL MELBOURNE INST TECHNOL,CTR MICROELECTR & MAT TECHNOL,MELBOURNE 3000,AUSTRALIA

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 01期

关键词：

D O I：

10.1063/1.107373

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This work presents a systematic study of the substrate temperature dependence for the formation of the photoluminescent W center during high energy self-ion irradiation of silicon. All previous studies of this center were for postirradiation annealing, and we show that the formation is well described by a thermally activated process involving both the release of point defects from secondary defect complexes and the rate-limited activation of the center itself. We deduce an activation energy of E(a) approximately 0.85 eV for the growth of the W center, and discuss the relationship of this type of experiment to conventional annealing studies.

引用

页码：59 / 61

页数：3

共 19 条

[1] NEW CLASS OF RELATED OPTICAL DEFECTS IN SILICON IMPLANTED WITH THE NOBLE-GASES HE, NE, AR, KR, AND XE [J].

BURGER, N ;

THONKE, K ;

SAUER, R ;

PENSL, G .

PHYSICAL REVIEW LETTERS, 1984, 52 (18) :1645-1648

[2] ION-INDUCED DEFECTS IN SEMICONDUCTORS [J].

CORBETT, JW ;

KARINS, JP ;

TAN, TY .

NUCLEAR INSTRUMENTS & METHODS, 1981, 182 (APR) :457-476

[3] THE OPTICAL-PROPERTIES OF LUMINESCENCE-CENTERS IN SILICON [J].

DAVIES, G .

PHYSICS REPORTS-REVIEW SECTION OF PHYSICS LETTERS, 1989, 176 (3-4) :83-188

[4] THE 1018 MEV (W OR I1) VIBRONIC BAND IN SILICON [J].

DAVIES, G ;

LIGHTOWLERS, EC ;

CIECHANOWSKA, ZE .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1987, 20 (02) :191-205

[5] NEW RADIATIVE RECOMBINATION PROCESSES INVOLVING NEUTRAL DONORS AND ACCEPTORS IN SILICON AND GERMANIUM [J].

DEAN, PJ ;

HAYNES, JR ;

FLOOD, WF .

PHYSICAL REVIEW, 1967, 161 (03) :711-&

[6] ION IMPLANTATION IN SEMICONDUCTORS .2. DAMAGE PRODUCTION AND ANNEALING [J].

GIBBONS, JF .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1972, 60 (09) :1062-&

[7] RECOMBINATION LUMINESCENCE FROM ION-IMPLANTED SILICON [J].

KIRKPATRICK, CG ;

NOONAN, JR ;

STREETMAN, BG .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1976, 30 (02) :97-106

[8] SYMMETRY AND NATURE OF THE 1.0186 EV LUMINESCENCE CENTER IN NEUTRON-IRRADIATED SILICON [J].

MINAEV, NS ;

MUDRII, AV ;

TKACHEV, VD .

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1981, 108 (02) :K89-K94

[9]

MITCHELL IV, 1990, POSITRON BEAMS SOLID, P121

[10]

MUDRYI AV, 1975, SOV PHYS SEMICOND+, V8, P875

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