GALLIUM DIFFUSION IN SILICON

被引：14

作者：

OKAMURA, M

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1971年 / 10卷 / 04期

关键词：

D O I：

10.1143/JJAP.10.434

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：434 / &

共 20 条

[1]

BOLTAKS BI, 1964, SOV PHYS-SOL STATE, V5, P2061

[2] DETERMINATION OF GAMMA-RAY ABUNDANCE DIRECTLY FROM THE TOTAL ABSORPTION PEAK [J].

COVELL, DF .

ANALYTICAL CHEMISTRY, 1959, 31 (11) :1785-1790

[3] FIELD-RETARDED DIFFUSION OF ANTIMONY IN GERMANIUM [J].

FA, C ;

ZULEEG, R .

SOLID-STATE ELECTRONICS, 1961, 3 (01) :18-&

[4] DIFFUSION OF DONOR AND ACCEPTOR ELEMENTS IN SILICON [J].

FULLER, CS ;

DITZENBERGER, JA .

JOURNAL OF APPLIED PHYSICS, 1956, 27 (05) :544-553

[5]

FULLER CS, 1959, DEFECT INTERACTIONS, P192

[6] DIFFUSION OF GALLIUM THROUGH SILICON DIOXIDE LAYER [J].

GROVE, AS ;

LEISTIKO, O ;

SAH, CT .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1964, 25 (09) :985-&

[7] RESISTIVITY OF BULK SILICON AND OF DIFFUSED LAYERS IN SILICON [J].

IRVIN, JC .

BELL SYSTEM TECHNICAL JOURNAL, 1962, 41 (02) :387-+

[8] SIMULTANEOUS DIFFUSION OF OPPOSITELY CHARGED IMPURITIES IN SEMICONDUCTORS [J].

KLEIN, T ;

BEALE, JRA .

SOLID-STATE ELECTRONICS, 1966, 9 (01) :59-&

[9] EFFECT OF SURFACE IMPERFECTIONS ON GALLIUM DIFFUSION IN SILICON ( 1200DEGREES C E ) [J].

KREN, JG ;

WAJDA, ES ;

MASTERS, BJ .

APPLIED PHYSICS LETTERS, 1964, 5 (03) :49-&

[10] DIFFUSION OF GALLIUM IN SILICON [J].

KURTZ, AD ;

GRAVEL, CL .

JOURNAL OF APPLIED PHYSICS, 1958, 29 (10) :1456-1459

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