RADIATION DEFECT DISTRIBUTION IN PROTON-IRRADIATED SILICON

被引：28

作者：

WONDRAK, W

BETHGE, K

SILBER, D

机构：

[1] UNIV FRANKFURT,INST KERNPHYS,D-6000 FRANKFURT,FED REP GER

[2] UNIV BREMEN,FACHBEREICH 1,D-2000 BREMEN,FED REP GER

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 62卷 / 08期

关键词：

D O I：

10.1063/1.339289

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3464 / 3466

页数：3

共 14 条

[1] DEFECT PRODUCTION AND LIFETIME CONTROL IN ELECTRON AND GAMMA-IRRADIATED SILICON [J].

BROTHERTON, SD ;

BRADLEY, P .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (08) :5720-5732

[2] CHARGE-CONTROL ANALYSIS OF THE COMFET TURN-OFF TRANSIENT [J].

FOSSUM, JG ;

MCDONALD, RJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (09) :1377-1382

[3] HYDROGEN-RELATED DEEP LEVELS IN PROTON-BOMBARDED SILICON [J].

IRMSCHER, K ;

KLOSE, H ;

MAASS, K .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1984, 17 (35) :6317-6329

[4]

Kimerling L. C., 1979, International Conference on Defects and Radiation Effects in Semiconductors, P273

[5] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J].

LANG, DV .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) :3023-3032

[6] CARBON INTERSTITIAL IN ELECTRON-IRRADIATED SILICON [J].

LEE, YH ;

CHENG, LJ ;

GERSON, JD ;

MOONEY, PM ;

CORBETT, JW .

SOLID STATE COMMUNICATIONS, 1977, 21 (01) :109-111

[7] DOUBLE CORRELATION TECHNIQUE (DDLTS) FOR ANALYSIS OF DEEP LEVEL PROFILES IN SEMICONDUCTORS [J].

LEFEVRE, H ;

SCHULZ, M .

APPLIED PHYSICS, 1977, 12 (01) :45-53

[8] EFFICIENCY OF RADIATION DEFECT FORMATION IN SILICON AT VARIOUS INTENSITIES OF ELECTRON AND GAMMA-RAY IRRADIATION [J].

LUGAKOV, PF ;

LUKYANITSA, VV .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1984, 83 (02) :521-528

[9] PRODUCTION OF FAST SWITCHING POWER THYRISTORS BY PROTON IRRADIATION [J].

SAWKO, DC ;

BARTKO, J .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1983, 30 (02) :1756-1758

[10]

Silber D., 1985, International Electron Devices Meeting. Technical Digest (Cat. No. 85CH2252-5), P162

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