CHARGE-CONTROL ANALYSIS OF THE COMFET TURN-OFF TRANSIENT

被引：19

作者：

FOSSUM, JG

MCDONALD, RJ

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1986年 / 33卷 / 09期

关键词：

D O I：

10.1109/T-ED.1986.22673

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1377 / 1382

页数：6

共 12 条

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Goodman A. M., 1983, International Electron Devices Meeting 1983. Technical Digest, P79

[8] MODELING THE TURN-OFF CHARACTERISTICS OF THE BIPOLAR-MOS TRANSISTOR [J].

KUO, DS ;

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