ION-BEAM-ASSISTED ETCHING IN GA+/GAAS/CL2 SYSTEM

被引：4

作者：

KOSUGI, T

IWASE, H

GAMO, K

机构：

[1] OSAKA UNIV,EXTREME MAT RES CTR,TOYONAKA,OSAKA 560,JAPAN

[2] OSAKA UNIV,DEPT ELECT ENGN,TOYONAKA,OSAKA 560,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷 / 6B期

关键词：

ION-BEAM-ASSISTED ETCHING OF GAAS; GA+ FOCUSED ION BEAM; PULSED BEAM; RATE EQUATION MODEL; BALOOCH MODEL; STICKING PROBABILITY; ENERGY DEPENDENCE;

D O I：

10.1143/JJAP.32.3051

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the characteristics of ion-beam-assisted etching of GaAs by continuous and pulsed Ga+ beam irradiation in Cl2 ambient. A rate equation model was proposed to explain the measured etch yield. Due to pulsed beam irradiation, the etch yield increased to 500 atoms/ion with decreasing pulse duty ratio. This increase was explained by the accumulation of GaCl3 on the surface while the ion beam is off based on the rate equation model.

引用

收藏

页码：3051 / 3057

页数：7

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