MODULATED ION-BEAM STUDIES OF PRODUCT FORMATION AND EJECTION IN ION-INDUCED ETCHING OF GAAS BY CL2

被引：36

作者：

AMEEN, MS ^{[1
]}

MAYER, TM ^{[1
]}

机构：

[1] UNIV N CAROLINA,DEPT CHEM,CHAPEL HILL,NC 27514

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 63卷 / 04期

关键词：

D O I：

10.1063/1.340022

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1152 / 1157

页数：6

共 19 条

[1] SURFACE SEGREGATION DURING REACTIVE ETCHING OF GAAS AND INP [J].

AMEEN, MS ;

MAYER, TM .

JOURNAL OF APPLIED PHYSICS, 1986, 59 (03) :967-969

[2] THE THERMAL AND ION-ASSISTED REACTIONS OF GAAS(100) WITH MOLECULAR CHLORINE [J].

BALOOCH, M ;

OLANDER, DR ;

SIEKHAUS, WJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (04) :794-805

[3] SPUTTERING OF CHLORINATED SILICON SURFACES STUDIED BY SECONDARY ION MASS-SPECTROMETRY AND ION-SCATTERING SPECTROSCOPY [J].

BARISH, EL ;

VITKAVAGE, DJ ;

MAYER, TM .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (04) :1336-1342

[4] SURFACE-COMPOSITION AND ETCHING OF III-V SEMICONDUCTORS IN CL-2 ION-BEAMS [J].

BARKER, RA ;

MAYER, TM ;

BURTON, RH .

APPLIED PHYSICS LETTERS, 1982, 40 (07) :583-586

[5] STUDIES ON THE MECHANISM OF CHEMICAL SPUTTERING OF SILICON BY SIMULTANEOUS EXPOSURE TO CL-2 AND LOW-ENERGY AR+ IONS [J].

DIELEMAN, J ;

SANDERS, FHM ;

KOLFSCHOTEN, AW ;

ZALM, PC ;

DEVRIES, AE ;

HARING, A .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (05) :1384-1392

[6] EXPERIMENTAL-EVIDENCE FOR THE ABSENCE OF LOCAL THERMAL-EQUILIBRIUM IN CHEMICAL SPUTTERING [J].

DIELEMAN, J ;

SANDERS, FHM ;

ZALM, PC .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 7-8 (MAR) :809-813

[7] MASS AND ENERGY-DISTRIBUTION OF PARTICLES SPUTTER ETCHED FROM SI IN A XEF2 ENVIRONMENT [J].

HARING, RA ;

HARING, A ;

SARIS, FW ;

DEVRIES, AE .

APPLIED PHYSICS LETTERS, 1982, 41 (02) :174-176

[8] ON THE ENERGY AND ANGULAR-DISTRIBUTION OF SPUTTERED POLYATOMIC-MOLECULES [J].

HARING, RA ;

ROOSENDAAL, HE ;

ZALM, PC .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 28 (02) :205-213

[9] ARGON-ION ASSISTED ETCHING OF SILICON BY MOLECULAR CHLORINE [J].

KOLFSCHOTEN, AW ;

HARING, RA ;

HARING, A ;

DEVRIES, AE .

JOURNAL OF APPLIED PHYSICS, 1984, 55 (10) :3813-3818

[10] INVESTIGATION OF THE KINETIC MECHANISM FOR THE ION-ASSISTED ETCHING OF GAAS IN CL-2 USING A MODULATED ION-BEAM [J].

MCNEVIN, SC ;

BECKER, GE .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (12) :4670-4678

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