CURRENT TRANSPORT MECHANISMS IN EPITAXIAL CDS/CDTE HETEROJUNCTIONS

被引：14

作者：

ERCELEBI, C ^{[1
]}

BRINKMAN, AW ^{[1
]}

FURLONG, TS ^{[1
]}

WOODS, J ^{[1
]}

机构：

[1] UNIV DURHAM,SCH ENGN & APPL SCI,APPL PHYS GRP,DURHAM DH1 3LE,ENGLAND

来源：

JOURNAL OF CRYSTAL GROWTH | 1990年 / 101卷 / 1-4期

关键词：

Crystals--Epitaxial Growth - Electrons--Diffraction - Semiconducting Cadmium Compounds;

D O I：

10.1016/0022-0248(90)90957-M

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Epitaxial n-CdS/p-CdTe heterojunctions have been fabricated by the vacuum evaporation of CdS onto phosphorus doped {{circle, and vertical bar}111} B CdTe substrates. Analysis of the current-voltage and capacitance-voltage characteristics suggests that electrical transport across the junction is dominated by a multi-step tunneling process. Although open circuit voltage and short circuit current values were high, the overall photovoltaic conversion efficiency of the devices was restricted to ≈ 6%, because of the relatively high resistivity of the CdTe substrates. © 1989.

引用

页码：162 / 166

页数：5

共 12 条

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