PHOTOLUMINESCENCE OF ANISOTROPICALLY ETCHED SILICON

被引：8

作者：

GORBACH, TY

RUDKO, GY

SMERTENKO, PS

SVECHNIKOV, SV

VALAKH, MY

机构：

[1] Institute of Physics of Semiconductors, Ukrainian Academy of Sciences, Kiev-28, 252650

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1994年 / 58卷 / 02期

关键词：

D O I：

10.1007/BF00332176

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Visible room-temperature luminescence of Anisotropically Chemically Etched (ACE) silicon under ''spontaneous'' chemical surface modification in HNO3:HF solution is reported. The material is investigated by SEM, AES, IR transmission and Raman scattering methods.

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页码：183 / 186

页数：4

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