共 82 条
[41]
ELECTRON-ENERGY LOSS SPECTROSCOPY AND WORK FUNCTION MEASUREMENTS ON SB/GAAS(110) - EXAMPLE OF AN UNPINNED INTERFACE
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS,
1986, 4 (03)
:958-961
[43]
THE ADSORPTION AND ELECTRONIC-STRUCTURE OF ANTIMONY LAYERS ON CLEAN CLEAVED INDIUM PHOSPHIDE(110) SURFACES
[J].
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS,
1985, 18 (25)
:4975-4986
[44]
ATOMIC GEOMETRIES OF ZNSE(110) AND GAAS(110) - DETERMINATION BY PHOTOEMISSION SPECTROSCOPY
[J].
PHYSICAL REVIEW B,
1984, 30 (02)
:1109-1111
[45]
SB OVERLAYERS ON (110) SURFACES OF III-V-SEMICONDUCTORS - TOTAL-ENERGY MINIMIZATION AND SURFACE ELECTRONIC-STRUCTURE
[J].
PHYSICAL REVIEW B,
1985, 31 (04)
:2213-2229
[46]
UNIFIED MODEL OF IDEAL METAL-SEMICONDUCTOR CONTACTS AND SEMICONDUCTOR HETEROJUNCTIONS
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS,
1986, 4 (03)
:869-873
[49]
MARTENSSON P, 1986, PHYS REV B, V33, P7399, DOI 10.1103/PhysRevB.33.7399
[50]
ELECTRONIC-STRUCTURE OF SB OVERLAYERS ON GAAS(110)
[J].
PHYSICAL REVIEW B,
1986, 33 (04)
:2559-2563