DAMAGED AND DAMAGE-FREE HYDROGENATION OF GAAS - THE EFFECT OF REACTOR GEOMETRY

被引：9

作者：

JACKSON, GS ^{[1
]}

BEBERMAN, J ^{[1
]}

FENG, MS ^{[1
]}

HSIEH, KC ^{[1
]}

HOLONYAK, N ^{[1
]}

VERDEYEN, J ^{[1
]}

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 10期

关键词：

D O I：

10.1063/1.342428

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5175 / 5178

页数：4

共 12 条

[1]

Babat G.I., 1947, J I ELECT ENG 3, V94, P27, DOI [10.1049/ji-3-2.1947.0005, DOI 10.1049/JI-3-2.1947.0005]

[2] HYDROGEN IN CRYSTALLINE SILICON - A DEEP DONOR [J].

CAPIZZI, M ;

MITTIGA, A .

APPLIED PHYSICS LETTERS, 1987, 50 (14) :918-920

[3]

CHANG RP, 1981, APPL PHYS LETT, V38, P899

[4] DONOR NEUTRALIZATION IN GAAS(SI) BY ATOMIC-HYDROGEN [J].

CHEVALLIER, J ;

DAUTREMONTSMITH, WC ;

TU, CW ;

PEARTON, SJ .

APPLIED PHYSICS LETTERS, 1985, 47 (02) :108-110

[5]

GIBBONS JF, 1975, PROJECTED RANGE STAT

[6] STRIPE-GEOMETRY ALXGA1-XAS-GAAS QUANTUM-WELL LASERS VIA HYDROGENATION [J].

JACKSON, GS ;

PAN, N ;

FENG, MS ;

STILLMAN, GE ;

HOLONYAK, N ;

BURNHAM, RD .

APPLIED PHYSICS LETTERS, 1987, 51 (20) :1629-1631

[7] HIGH-POWER GAIN-GUIDED COUPLED-STRIPE QUANTUM WELL LASER ARRAY BY HYDROGENATION [J].

JACKSON, GS ;

HALL, DC ;

GUIDO, LJ ;

PLANO, WE ;

PAN, N ;

HOLONYAK, N ;

STILLMAN, GE .

APPLIED PHYSICS LETTERS, 1988, 52 (09) :691-693

[8] HYDROGEN PASSIVATION OF SHALLOW-ACCEPTOR IMPURITIES IN PARA-TYPE GAAS [J].

JOHNSON, NM ;

BURNHAM, RD ;

STREET, RA ;

THORNTON, RL .

PHYSICAL REVIEW B, 1986, 33 (02) :1102-1105

[9] PASSIVATION OF THE DOMINANT DEEP LEVEL (EL2) IN GAAS BY HYDROGEN [J].

LAGOWSKI, J ;

KAMINSKA, M ;

PARSEY, JM ;

GATOS, HC ;

LICHTENSTEIGER, M .

APPLIED PHYSICS LETTERS, 1982, 41 (11) :1078-1080

[10] SI DONOR NEUTRALIZATION IN HIGH-PURITY GAAS [J].

PAN, N ;

LEE, B ;

BOSE, SS ;

KIM, MH ;

HUGHES, JS ;

STILLMAN, GE ;

ARAI, K ;

NASHIMOTO, Y .

APPLIED PHYSICS LETTERS, 1987, 50 (25) :1832-1834

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