PULSED E-B APPARATUS AND ANNEALING OF ION-IMPLANTED SILICON

被引：1

作者：

ITOH, T

TAMURA, H

RAO, DX

OHKUBO, Y

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1981年 / 128卷 / 09期

关键词：

D O I：

10.1149/1.2127790

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：2032 / 2034

页数：3

共 11 条

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[8]

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[10] THEORETICAL-ANALYSIS OF THERMAL AND MASS-TRANSPORT IN ION-IMPLANTED LASER-ANNEALED SILICON [J].

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PRONKO, PP .

APPLIED PHYSICS LETTERS, 1978, 33 (05) :455-458

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