ELECTRICAL AND PHOTOCONDUCTIVE PROPERTIES OF ION-IMPLANTED AMORPHOUS-SILICON

被引：38

作者：

LECOMBER, PG ^{[1
]}

SPEAR, WE ^{[1
]}

MULLER, G ^{[1
]}

KALBITZER, S ^{[1
]}

机构：

[1] MAX PLANCK INST NUCL PHYS,D-6900 HEIDELBERG,FED REP GER

来源：

关键词：

D O I：

10.1016/0022-3093(80)90615-8

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：327 / 332

页数：6

共 9 条

[1] PHOTOCONDUCTIVITY AND RECOMBINATION IN DOPED AMORPHOUS SILICON
ANDERSON, DA
SPEAR, WE
[J]. PHILOSOPHICAL MAGAZINE, 1977, 36 (03): : 695 - 712
[2] INTERSTITIAL DOPING OF AMORPHOUS SILICON
BEYER, W
FISCHER, R
[J]. APPLIED PHYSICS LETTERS, 1977, 31 (12) : 850 - 852
[3] KALBITZER S, PHIL MAG
[4] Loveland R. J., 1973, Journal of Non-Crystalline Solids, V13, P55, DOI 10.1016/0022-3093(73)90035-5
[5] MULLER G, 1977, 7TH P INT C AM LIQ S, P442
[6] DOPING OF AMORPHOUS SILICON BY ALKALI-ION IMPLANTATIONS
SPEAR, WE
LECOMBER, PG
KALBITZER, S
MULLER, G
[J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1979, 39 (02): : 159 - 165
[7] SUBSTITUTIONAL DOPING OF AMORPHOUS SILICON
SPEAR, WE
LECOMBER, PG
[J]. SOLID STATE COMMUNICATIONS, 1975, 17 (09) : 1193 - 1196
[8] ELECTRONIC PROPERTIES OF SUBSTITUTED DOPED AMORPHOUS SI AND GE
SPEAR, WE
LECOMBER, PG
[J]. PHILOSOPHICAL MAGAZINE, 1976, 33 (06): : 935 - 949
[9] TEMPERATURE-DEPENDENCE OF PHOTOCONDUCTIVITY IN A-SI
SPEAR, WE
LOVELAND, RJ
ALSHARBA.A
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1974, 15 (03) : 410 - 422