TEMPERATURE EFFECTS IN SILICON AVALANCHE-DIODES

被引：25

作者：

CONRADI, J ^{[1
]}

机构：

[1] RCA LTD, R&D LABS, ST ANNE DE BELLEVUE, QUEBEC, CANADA

来源：

SOLID-STATE ELECTRONICS | 1974年 / 17卷 / 01期

关键词：

D O I：

10.1016/0038-1101(74)90118-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：99 / 106

页数：8

共 23 条

[1] LOW-FREQUENCY NOISE MEASUREMENTS IN SILICON AVALANCHE PHOTODIODES
BAERTSCH, RD
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (03) : 383 - +
[2] DISTRIBUTION FUNCTIONS AND IONIZATION RATES FOR HOT ELECTRONS IN SEMICONDUCTORS
BARAFF, GA
[J]. PHYSICAL REVIEW, 1962, 128 (06): : 2507 - &
[3] A MODEL OF AVALANCHE PHOTODIODE
BIARD, JR
SHAUNFIELD, WN
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (05) : 233 - +
[4] TEMPERATURE DEPENDENCE OF BREAKDOWN VOLTAGE IN SILICON ABRUPT P-N JUNCTIONS
CHANG, CY
CHIU, SS
HSU, LP
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1971, ED18 (06) : 391 - &
[5] DISTRIBUTION OF GAINS IN UNIFORMLY MULTIPLYING AVALANCHE PHOTODIODES - EXPERIMENTAL
CONRADI, J
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (06) : 713 - &
[6] TEMPERATURE DEPENDENCE OF AVALANCHE MULTIPLICATION IN SEMICONDUCTORS
CROWELL, CR
SZE, SM
[J]. APPLIED PHYSICS LETTERS, 1966, 9 (06) : 242 - &
[7] RECENT RESULTS OBTAINED WITH HIGH FIELD INTERNALLY AMPLIFYING SEMICONDUCTOR RADIATION DETECTORS
HUTH, GC
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1966, NS13 (01) : 36 - +
[8] NOISE CHARACTERISTICS IN SILICON PHOTODIODES
IGO, T
SATO, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1969, 8 (12) : 1481 - +
[9] HIGH-SPEED PHOTODIODE SIGNAL ENHANCEMENT AT AVALANCHE BREAKDOWN VOLTAGE
JOHNSON, KM
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1965, ED12 (02) : 55 - +
[10] AVALANCHE BREAKDOWN OF DIFFUSED SILICON P-N JUNCTIONS
KOKOSA, RA
DAVIES, RL
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (12) : 874 - +

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