OXYGEN ADSORPTION-DESORPTION EFFECT ON THE ELECTRICAL-PROPERTIES OF A-SI-H LAYERS

被引：3

作者：

AOUCHER, M

MOHAMMEDBRAHIM, T

BODIN, C

MENCARAGLIA, D

机构：

[1] UNIV PARIS 06,ECOLE SUPER ELECT,GENIE ELECT LAB,F-91192 GIF SUR YVETTE,FRANCE

[2] UNIV PARIS 09,ECOLE SUPER ELECT,GENIE ELECT LAB,F-91192 GIF SUR YVETTE,FRANCE

来源：

SENSORS AND ACTUATORS B-CHEMICAL | 1995年 / 26卷 / 1-3期

关键词：

OXYGEN ADSORPTION DESORPTION EFFECT; ELECTRICAL PROPERTIES; SILICON-HYDROGEN LAYERS;

D O I：

10.1016/0925-4005(94)01569-4

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

Oxygen interaction with hydrogenated amorphous silicon a-Si:H thin films is studied using conductance measurements and X-ray photoelectron spectroscopy (XPS) analysis. Oxygen adsorption on an a-Si:H surface at 160 degrees C gives a reversible variation of the conductance, The before-adsorption conductance value is restored after desorption at 220 degrees C. XPS analysis of the film surface shows the presence of a thick film (similar to 10 Angstrom) of silicon bonded to 1, 2, 3 or 4 oxygen. These results are explained by the effect of a negative charge induced at the surface. This charge depends on the equilibrium between the different oxidation states of the amorphous silicon surface detected by XPS measurements.

引用

页码：113 / 115

页数：3

共 10 条

[1] ELECTRICAL CONDUCTANCE VARIATION OF A-SI-H FILMS DURING A TEMPERATURE-PROGRAMMED DESORPTION [J].