HOLE TRAPPING IN SIO2-FILMS ANNEALED IN LOW-PRESSURE OXYGEN ATMOSPHERE

被引：21

作者：

HOFMANN, K ^{[1
]}

YOUNG, DR ^{[1
]}

RUBLOFF, GW ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

关键词：

D O I：

10.1063/1.339702

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：925 / 930

页数：6

共 33 条

[1] AVALANCHE INJECTION OF HOLES INTO SIO2
AITKEN, JM
YOUNG, DR
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1977, 24 (06) : 2128 - 2134
[2] Aslam M., 1983, Insulating Films on Semiconductors. Proceedings of the International Conference INFOS 83, P103
[3] BALK P, 1984, SOLID STATE ELECTRON, V27, P709, DOI 10.1016/0038-1101(84)90019-4
[4] ELECTRICAL-PROPERTIES OF POST-ANNEALED THIN SIO2-FILMS
COHEN, SS
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (04) : 929 - 932
[5] De Keersmaecker R. F., 1983, Insulating Films on Semiconductors. Proceedings of the International Conference INFOS 83, P85
[6] DiMaria D.J., 1978, PHYS SIO2 ITS INTERF, P160, DOI [10.1016/B978-0-08-023049-8.50034-8, DOI 10.1016/B978-0-08-023049-8.50034-8]
[7] LOCATION OF POSITIVE CHARGES IN SIO2-FILMS ON SI GENERATED BY VUV PHOTONS, X-RAYS, AND HIGH-FIELD STRESSING
DIMARIA, DJ
WEINBERG, ZA
AITKEN, JM
[J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (03) : 898 - 906
[8] THRESHOLD-VOLTAGE INSTABILITY IN MOSFETS DUE TO CHANNEL HOT-HOLE EMISSION
FAIR, RB
SUN, RC
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (01) : 83 - 94
[9] GRUNTHANER FJ, 1978, PHYSICS SIO2 ITS INT, P389
[10] HIGH-TEMPERATURE OXIDATION, REDUCTION, AND VOLATILIZATION REACTIONS OF SILICON AND SILICON-CARBIDE
GULBRANSEN, EA
JANSSON, SA
[J]. OXIDATION OF METALS, 1972, 4 (03): : 181 - +