HOLE TRAPPING IN SIO2-FILMS ANNEALED IN LOW-PRESSURE OXYGEN ATMOSPHERE

[21] OXYGEN PARTIAL-PRESSURE DEPENDENCE OF THE FIXED SURFACE-STATE CHARGE QSS DUE TO THERMAL-OXIDATION OF N-(100) SILICON [J]. APPLIED PHYSICS LETTERS, 1979, 34 (09) : 587 - 588

[22] AVALANCHE INJECTION CURRENTS AND CHARGING PHENOMENA IN THERMAL SIO2 [J]. APPLIED PHYSICS LETTERS, 1969, 15 (06) : 174 - +

[23] NICOLLIAN EH, 1982, MOS PHYSICS TECHNOLO

[24] RAZOUK RR, 1980, FAL EL SOC M, P1385

[25] EFFECT OF HIGH-TEMPERATURE, POST-OXIDATION ANNEALING ON THE ELECTRICAL-PROPERTIES OF THE SI-SIO2 INTERFACE [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (02): : 345 - 347

[26] CHARGES IN METAL-OXIDE-SEMICONDUCTOR SAMPLES OF VARIOUS TECHNOLOGIES INDUCED BY CO-60-GAMMA-RAY AND X-RAY QUANTA [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (02) : 393 - 399

[27] REACTION OF OXYGEN WITH SI(111) AND (100) - CRITICAL CONDITIONS FOR THE GROWTH OF SIO2 [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (06) : 1300 - 1306

[28] HIGH-TEMPERATURE SIO2 DECOMPOSITION AT THE SIO2/SI INTERFACE [J]. PHYSICAL REVIEW LETTERS, 1985, 55 (21) : 2332 - 2335

[29] WEINBERG ZA, 1984, APPL PHYS LETT, V45, P204

[30] ELECTRON TRAPPING IN SIO2 AT 295 AND 77-DEGREES-K [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (10) : 6366 - 6372

[21] OXYGEN PARTIAL-PRESSURE DEPENDENCE OF THE FIXED SURFACE-STATE CHARGE QSS DUE TO THERMAL-OXIDATION OF N-(100) SILICON [J]. APPLIED PHYSICS LETTERS, 1979, 34 (09) : 587 - 588

[22] AVALANCHE INJECTION CURRENTS AND CHARGING PHENOMENA IN THERMAL SIO2 [J]. APPLIED PHYSICS LETTERS, 1969, 15 (06) : 174 - +

[23] NICOLLIAN EH, 1982, MOS PHYSICS TECHNOLO

[24] RAZOUK RR, 1980, FAL EL SOC M, P1385

[25] EFFECT OF HIGH-TEMPERATURE, POST-OXIDATION ANNEALING ON THE ELECTRICAL-PROPERTIES OF THE SI-SIO2 INTERFACE [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (02): : 345 - 347

[26] CHARGES IN METAL-OXIDE-SEMICONDUCTOR SAMPLES OF VARIOUS TECHNOLOGIES INDUCED BY CO-60-GAMMA-RAY AND X-RAY QUANTA [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (02) : 393 - 399

[27] REACTION OF OXYGEN WITH SI(111) AND (100) - CRITICAL CONDITIONS FOR THE GROWTH OF SIO2 [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (06) : 1300 - 1306

[28] HIGH-TEMPERATURE SIO2 DECOMPOSITION AT THE SIO2/SI INTERFACE [J]. PHYSICAL REVIEW LETTERS, 1985, 55 (21) : 2332 - 2335

[29] WEINBERG ZA, 1984, APPL PHYS LETT, V45, P204

[30] ELECTRON TRAPPING IN SIO2 AT 295 AND 77-DEGREES-K [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (10) : 6366 - 6372