CHARGES IN METAL-OXIDE-SEMICONDUCTOR SAMPLES OF VARIOUS TECHNOLOGIES INDUCED BY CO-60-GAMMA-RAY AND X-RAY QUANTA

被引：7

作者：

RINGEL, H

KNOLL, M

BRAUNIG, D

FAHRNER, WR

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 57卷 / 02期

关键词：

D O I：

10.1063/1.334763

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：393 / 399

页数：7

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共 18 条

[1] AITKEN JM, 1976, IEEE T NUCL SCI, V23, P1526, DOI 10.1109/TNS.1976.4328533
[2] RADIATION HARDENING OF P-MOS DEVICES BY OPTIMIZATION OF THERMAL S102 GATE INSULATOR
AUBUCHON, KG
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1971, NS18 (06) : 117 - +
[3] BOESCH HE, 1982, IEEE T NUCL SCI, V29, P1446
[4] CHARGE YIELD AND DOSE EFFECTS IN MOS CAPACITORS AT 80-K
BOESCH, HE
MCGARRITY, JM
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1976, 23 (06) : 1520 - 1525
[5] HOLE AND ELECTRON-TRANSPORT IN SIO2-FILMS
CURTIS, OL
SROUR, JR
CHIU, KY
[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (10) : 4506 - 4513
[6] PROCESS OPTIMIZATION OF RADIATION-HARDENED CMOS INTEGRATED-CIRCUITS
DERBENWICK, GF
GREGORY, BL
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1975, 22 (06) : 2151 - 2156
[7] FERRETTI R, 1976, THESIS TU BERLIN
[8] SIMPLE-MODEL FOR PREDICTING RADIATION EFFECTS IN MOS DEVICES
FREEMAN, R
HOLMESSIEDLE, A
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1978, 25 (06) : 1216 - 1225
[9] OXIDE THICKNESS DEPENDENCE OF HIGH-ENERGY ELECTRON-INDUCED, VUV-INDUCED, AND CORONA-INDUCED CHARGE IN MOS CAPACITORS
HUGHES, GW
POWELL, RJ
WOODS, MH
[J]. APPLIED PHYSICS LETTERS, 1976, 29 (06) : 377 - 379
[10] GENERATION OF OXIDE CHARGE AND INTERFACE STATES BY IONIZING-RADIATION AND BY TUNNEL INJECTION EXPERIMENTS
KNOLL, M
BRAUNIG, D
FAHRNER, WR
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1982, 29 (06) : 1471 - 1478