OXYGEN PARTIAL-PRESSURE DEPENDENCE OF THE FIXED SURFACE-STATE CHARGE QSS DUE TO THERMAL-OXIDATION OF N-(100) SILICON

The fixed surface-state charge QSS has been determined for (100) n-type silicon oxidized in different partial pressures of oxygen (p O2). It has been found that the QSS is directly proportional to pO2 and is given by QSS× 10-10= (14.1±12.7) pO2+(5.44±0. 78) in the pO2 range 0.1-1.0 where pO 2 is the partial pressure of oxygen in the oxygen-nitrogen mixture. The results are discussed in view of the concentration of the excess silicon present in silicon near the oxide-silicon interface and its assumed relationship to the length of oxidation-induced stacking faults in silicon.