ROOM-TEMPERATURE CONTINUOUS WAVE OPERATION OF A VISIBLE ALGAAS/INGAP TRANSVERSE JUNCTION STRIPE LASER GROWN BY LIQUID-PHASE EPITAXY

被引：4

作者：

CHANG, LB

SHIA, LZ

机构：

[1] Department of Electrical Engineering, Chung-Cheng Institute of Technology, Tashi

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 09期

关键词：

D O I：

10.1063/1.106453

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Continuous wave operation of an AlGaAs/InGaP/AlGaAs transverse junction stripe (TJS) laser diode (LD) has been achieved at room temperature for the first time. It was grown on a (100) GaAs semi-insulating (SI) substrate by liquid phase epitaxy (LPE). This device, with 100-mu-m-wide and 500-mu-m long Zn diffused stripe geometry, exhibits a room-temperature threshold current of 420 mA. The corresponding threshold current density is as low as 0.85 kA/cm2, which is the lowest value for those electroluminescent devices with an AlGaAs/InGaP/AlGaAs heterostructure. An emission peak wavelength of 615 nm and a light output power of 300-mu-W/facet were also reported.

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页码：1090 / 1092

页数：3

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