ROLE OF ION-BEAM ENERGY FOR CRYSTALLINE GROWTH OF THIN-FILMS

Cubic boron nitride and aluminum nitride films were prepared by nitrogen ion beam bombardment and simultaneous boron or aluminum vapor deposition, and carbon films were prepared by neon ion irradiation during carbon vapor deposition (IVD method). These films were formed by varying the ion beam energy in the range 0.2-20 keV on substrates of silicon crystal wafers. In order to study the relationship between the crystalline growth of the films and the ion beam energies, X-ray diffraction and Raman-scattering analyses were performed for the evaluation of nitride films and carbon films, respectively. The results showed that the peak intensities changed with ion beam energy and the crystalline state of the films was dependent on the energy of the irradiated ions. As a result of a study of the thermal spike effect by ion beam irradiation, the dependence of the crystalline growth of the films on the ion beam energy was demonstrated.