ELECTRONIC-STRUCTURE STUDIES OF PLASMA-DEPOSITED AMORPHOUS-SILICON

被引：9

作者：

DREVILLON, B

SENEMAUD, C

CARDINAUD, C

KHODJA, MD

CODET, C

机构：

[1] UNIV PARIS 07,CHIM PHYS LAB,F-75221 PARIS 05,FRANCE

[2] UNIV PARIS SUD,PHYSICOCHIM RAYONNEMENTS LAB,MAT AMORPHES GRP,F-91400 ORSAY,FRANCE

来源：

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1986年 / 54卷 / 05期

关键词：

D O I：

10.1080/13642818608236852

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：335 / 342

页数：8

共 31 条

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[2]

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[6]

CARDINAUD C, 1986, UNPUB

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LIN, CC .

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[8] OXIDATION OF PLASMA-DEPOSITED HYDROGENATED AMORPHOUS-SILICON [J].

DREVILLON, B ;

VAILLANT, F .

THIN SOLID FILMS, 1985, 124 (3-4) :217-222

[9] A SPECTROSCOPIC ELLIPSOMETRY STUDY OF THE NUCLEATION AND GROWTH OF PLASMA-DEPOSITED AMORPHOUS-SILICON [J].

DREVILLON, B .

THIN SOLID FILMS, 1985, 130 (1-2) :165-170

[10] GROWTH OF HYDROGENATED AMORPHOUS-SILICON DUE TO CONTROLLED ION-BOMBARDMENT FROM A PURE SILANE PLASMA [J].

DREVILLON, B ;

PERRIN, J ;

SIEFERT, JM ;

HUC, J ;

LLORET, A ;

DEROSNY, G ;

SCHMITT, JPM .

APPLIED PHYSICS LETTERS, 1983, 42 (09) :801-803

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