STRUCTURE AND PRECIPITATION ON A SIGMA=13 TILT GRAIN-BOUNDARY IN SILICON

被引:8
作者
KIM, MJ
CARPENTER, RW
CHEN, YL
SCHWUTTKE, GH
机构
[1] Center for Solid State Science, Arizona State University, Tempe
关键词
D O I
10.1016/0304-3991(92)90122-Z
中图分类号
TH742 [显微镜];
学科分类号
摘要
The structure of a SIGMA = 13 (510), [001] pure tilt grain boundary in a Czochralski-grown silicon bicrystal was characterized by high-resolution electron microscopy. The observed boundary exhibited a coincident site lattice periodicity but had an aperiodic interface dislocation core structure. Discrete impurity precipitate particles were observed at the boundary. High-spatial-resolution electron-energy-loss-spectroscopy analysis showed them to be oxide particles of the form SiOx, with 0 < x < 1. The role of oxygen as an intrinsic impurity in the bicrystal on the structure of the boundary and on the oxide precipitation at the boundary is briefly discussed.
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页码:258 / 264
页数:7
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