OCTAHEDRAL PRECIPITATES IN HIGH-TEMPERATURE ANNEALED CZOCHRALSKI-GROWN SILICON

被引：32

作者：

SHIMURA, F

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1981年 / 54卷 / 03期

关键词：

D O I：

10.1016/0022-0248(81)90518-2

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

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页码：588 / 591

页数：4

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[10] SHIMURA F, UNPUBLISHED