CRYSTALLOGRAPHIC CHARACTERIZATION OF ZNSXSE1-X EPITAXIAL-FILMS

被引：9

作者：

OKAMOTO, K

ITOH, N

OGAWA, H

KAWABATA, T

KOIKE, S

机构：

[1] MATSUSHITA ELECTR CORP,DIV SEMICOND,NAGAOKA,KYOTO 617,JAPAN

[2] UNIV OSAKA PREFECTURE,COLL ENGN,DEPT ELECTR,SAKAI,OSAKA 591,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1988年 / 27卷 / 05期

关键词：

D O I：

10.1143/JJAP.27.L756

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L756 / L758

页数：3

共 7 条

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[3] A NEW TECHNIQUE FOR CRYSTALLOGRAPHIC CHARACTERIZATION OF HETEROEPITAXIAL CRYSTAL FILMS [J].

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[5]

ITOH N, 1988, IN PRESS APPL SURF S

[6] MOCVD GROWTH OF ZNSXSE1-X EPITAXIAL LAYERS LATTICE-MATCHED TO GAAS USING ALKYLS OF ZN, S AND SE [J].

MITSUHASHI, H ;

MITSUISHI, I ;

KUKIMOTO, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (11) :L864-L866

[7] THE EFFECT OF LATTICE MISFIT ON LATTICE-PARAMETERS AND PHOTOLUMINESCENCE PROPERTIES OF ATOMIC LAYER EPITAXY GROWN ZNSE ON (100)GAAS SUBSTRATES [J].

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