INTERFACE CHARACTERIZATION OF FULLY DEPLETED SOI MOSFET(S) BY A THRESHOLD-VOLTAGE METHOD

被引：7

作者：

YANG, PC

LI, SS

机构：

[1] Department of Electrical Engineering University of Florida, Gainesville

来源：

SOLID-STATE ELECTRONICS | 1993年 / 36卷 / 05期

关键词：

D O I：

10.1016/0038-1101(93)90254-N

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

[No abstract available]

引用

页码：801 / 802

页数：2

共 11 条

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[9] A SIMPLE ELECTRICAL METHOD TO DETERMINE THE SI AND OXIDE THICKNESSES IN SOI MATERIALS [J].

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IEEE ELECTRON DEVICE LETTERS, 1991, 12 (08) :427-429

[10] CHARACTERIZATION OF FRONT AND BACK SI-SIO2 INTERFACES IN THICK-FILM AND THIN-FILM SILICON-ON-INSULATOR MOS STRUCTURES BY THE CHARGE-PUMPING TECHNIQUE [J].

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