ENHANCED THERMAL-OXIDATION OF SILICON BY UV-IRRADIATION

被引：11

作者：

ISHIKAWA, Y

SHIBAMOTO, T

UCHIHARA, T

NAKAMICHI, I

机构：

[1] Department of Electrical Electronics Engineering, Nippon Institute of Technology, Minamisaitama, Saitama, 345, Miyashiro

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1991年 / 30卷 / 4B期

关键词：

SILICON; THERMAL OXIDATION; ENHANCEMENT; LOW TEMPERATURE; OXIDIZING SPECIES; UV LIGHT; AES; C-V CHARACTERISTIC;

D O I：

10.1143/JJAP.30.L661

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Silicon can be thermally oxidized at low temperatures under dry O2 or N2O flow with UV-irradiation. The oxide thickness is about 9.0 nm in 4 h at 500-degrees-C on dry O2 + UV oxidation. The oxide formed by dry O2 + UV is thicker than that formed by N2O + UV at a relatively long oxidation time. The main oxidation species are ozone for dry O2 + UV and excited-state 1D oxygen atoms for N2O + UV. The quality of oxide film formed by dry O2 + UV is equal to that formed by common oxidation in dry O2 without UV.

引用

页码：L661 / L663

页数：3

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