CHARACTERIZATION OF ZNSSE ON GAAS BY ETCHING AND X-RAY-DIFFRACTION

被引：26

作者：

KAMATA, A

MITSUHASHI, H

机构：

[1] Materials and Devices Research Laboratories, Toshiba R, D Center, Saiwai-ku, Kawasaki, 210

来源：

JOURNAL OF CRYSTAL GROWTH | 1994年 / 142卷 / 1-2期

关键词：

D O I：

10.1016/0022-0248(94)90266-6

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Zinc sulfoselenide epitaxial layers grown on GaAs substrates have been characterized by etch pit density (EPD) and full width at half maximum (FWHM) of double-crystal X-ray rocking curves. EPD was observed on a (100) ZnSxSe1-x/GaAs surface. The etching solution of 0.04% bromine-methanol at 3-degrees-C was found to work well for EPD measurement. EPD on the ZnSe epilayers was about 10(7) cm-2 for the general growth conditions, but was as low as 10(4) cm-2 for lattice-matched ZnSxSe1-x epitaxial layers which gave the narrowest FWHM of 13.6 arc sec.

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页码：31 / 36

页数：6

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